课程文献中心 更多>>

关键词： 磁阻发射   IGBT   时序控制   拟合   无级调速  

摘要： 为了实现磁阻发射无级调速威力可控,构建了IGBT时序控制无反拉力作用的二级磁阻发射电路,研究了电枢在线圈内弹道的速度-时间曲线,采用最小二乘原理对速度-时间曲线进行了分级多项式拟合;基于电枢终点效应及电枢飞行阻力系数,构建了弹丸飞行方程组及电枢出口速度的数值推导求解方法;当电枢目标出口速度小于第一级线圈所能达到的最大速度时,第二级线圈不工作,通过第一级速度时间拟合函数求得IGBT的通断时序来实现电枢目标出口速度;当电枢目标出口速度高于第一级线圈最高速度时,第一级IGBT按最大速度设置通断时序,通过第二级速度时间拟合函数求得IGBT的通断时序来实现电枢目标出口速度;最后通过实验对测试结果与理论值进行比较与分析,得出了通过选择正确的IGBT通断时序可以实现磁阻发射无级调速的结论。

关键词： RSLinx   DriveExecutive   DeviceLogix   软件调试   配置向导   自整定  

摘要： 文章介绍了使用AB变频器调试工具DriveExecutive软件调试Powerflex755变频器的过程。其中包括恢复出厂设置、电极参数、软件控制、自整定、通讯控制等功能。

关键词： 矿用设备   高频隔离型变频调速系统   无速度传感器矢量控制技术   控制器设计  

摘要： 在各行业中需要使用电动机作为驱动的重要部分,而且电动机所发挥的作用非常的重要,设备的核心组成部分,在各种应用场景中发挥着至关重要的作用,由于速度传感器容易受到外界环境的影响而导致故障,且需要额外的维护成本。本文探讨矿用高频隔离型变频调速系统,聚焦无速度传感器矢量控制技术,解决传统矢量控制中的问题,提出简单、低成本的解决方案,为电动机调速提供新思路。

关键词： AB755系列变频器   转炉   倾动系统  

摘要： 转炉倾动装置是冶炼过程中的关键设备,冶炼过程中,炉体倾动系统需要进行±360°旋转,旋转过程中由于液态钢水重心随着转炉倾角的变化而变化,同时炉体具有势能负载特性,因此对传动系统有更高的要求。文章基于AB755系列变频器在120t转炉倾动系统上的成功应用,从传动主从控制逻辑、抱闸控制逻辑、三用一备冗余控制方案、调试重点难点进行详细介绍。

关键词： 广义Birkhoff系统   Noether定理   最优控制   守恒量  

摘要： 探讨了广义Birkhoff系统分数阶最优控制问题的Noether定理。首先,基于Caputo分数阶导数提出广义Birkhoff系统的分数阶最优控制问题,并运用分数阶变分方法得到了广义Birkhoff系统的分数阶最优控制问题的极值条件。然后,运用分数阶微积分和分数阶变分方法讨论了泛函在无穷小变换群作用下的不变性,分别给出了其时间不变和时间变化情况下的分数阶最优控制问题的Noether定理。最后,应用实例显示方法的有效性。

关键词： IGBT   Gate charge   Collector current model   Double-pulse experiment   IMBALANCE  

摘要： In this study, a dynamic and static collector current (IC) model of the IGBT based on the gate charge is proposed. The gate charge could be easily obtained by measuring the voltage across the gate mirror circuit capacitance, and the transconductance obtained from the IC-VGE curve is mainly used. This model does not need the device structure parameters such as doping concentration, length, and thickness, thus is low cost and highly convenient. First, the gate charge is derived by integrating the currents of the variable capacitors CGE and CGC during the turn-on and turn-off transients, and an analytical relationship between the dynamic IC and QG is researched. Second, a static collector current IC is established, and the gate charge is obtained through current integration during the period of the Miller capacitance plateau. The influence of the temperature on the static transconductance is studied, and the accuracy of the static current model is improved. Finally, the performance of the model is optimized with various voltages, temperatures, and currents. The experimental results reveal that the proposed model achieves a collector current error of less than 5.6 % under various operating conditions, which verifies the accuracy of the proposed model.

关键词： Baseplate distortion   residual stress   component thickness   reflow temperature curve setting   material varieties   WARPAGE   SIMULATION  

摘要： The welding of a direct-bonded copper (DBC) substrate to the baseplate in insulated-gate bipolar transistor (IGBT) modules often induces distortion and residual stress within the baseplate, consequently impacting the operational reliability of the IGBT module. Therefore, a comprehensive analysis of the factors influencing baseplate distortion and residual stress during the reflow soldering process is imperative. This study employs a finite element simulation model to investigate the effects of varying thicknesses of IGBT module components, reflow temperature curve settings, and types of material on baseplate distortion and residual stress. The simulation results highlight that the material of the IGBT module components exerts the most substantial influence on baseplate distortion and residual stress, followed by component thickness, whereas the impact of the reflow temperature curve setting is comparatively minor. The analysis of these influencing factors offers valuable insights for optimizing component thickness selection, material choices for IGBT modules, and reflow temperature curve settings. Moreover, it serves as a practical guide for enhancing production processes and minimizing associated costs.

关键词： Field programmable gate array   Three-phase inverter circuit   Switch characteristics   Real-time simulation   REAL-TIME SIMULATION   CONVERTER   SYSTEMS  

摘要： The field of motor drive makes extensive use of electronic power modeling and simulation of three-phase IGBT full-bridge inverter circuits. The accuracy and computational efficiency of these models have a direct impact on the dependability of the motor control system. The majority of earlier research focused solely on static processes of turning on and off in IGBTs, disregarding the transient proesses that occur when three-phase IGBT full-bridge inverter circuits are switched at high frequencies. This has an impact on the circuits' accuracy in real-time simulation. Therefore, this paper proposes and builds a field-programmable logic gate array (FPGA)-based steady-state and transient dual-phase three-phase IGBT full-bridge inverter circuit model for the static and transient characteristics of the insulated gate bipolar transistor (IGBT) element in the circuit. Depending on whether or not the switching states of the six IGBTs in the three-phase IGBT fullbridge inverter circuit are altered, the simulation process is split into steady state and transient phases. In the steady state phase with large step size, the circuit is d iscretized using the binary L/ C approach. In the transient phase, the transient process is divided into several small-step-long time domains. Real-time simulation waveforms are generated by interleaving and combining the multistage fitting method's solution of the circuit's transient waveforms at tiny step lengths with the steady state phase. Finally, in order to demonstrate the accuracy of the circuit model in this work, the simulation results of the two-stage three-phase IGBT full-bridge inverter circuit model based on FPGA are compared with those of the conventional ideal model for waveform comparison and data analysis.

关键词： Capacitor voltage sorting sequence number   Diagnostic strategy   Modular multilevel converters   Open -circuit fault   Switching function  

摘要： Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.

关键词： IGBT   微沟槽绝缘栅二极管   沟槽栅   关断损耗   注入增强  

摘要： 本文介绍了关于IGBT的注入增强原理，以及使用SentaurusTCAD 软件对不同mesa宽度以及不同沟槽栅长度的器件进行了仿真优化，之后根据仿真结果以及第三代FS Trench设计平台，本文设计了一款650 V MPT-IGBT(Micro-Pattern Trench IGBT)。根据流片样品的测试结果表明，相比于传统的元胞节距(pitch)为4.5 μm IGBT，本文的器件可以在减少39％正向压降的同时，关断损耗也减少50.6％，实现相对于传统IGBT性能的提升。且本文器件结构完全兼容现有的制造工艺，不需要额外进行制造工艺的研发。