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关键词： GAA   MOSFET   High-K   Subthreshold   Inner gate   SCALING THEORY   CHANNEL   PERFORMANCE   SILICON   ANALOG   MODEL  

摘要： In this research paper, we present a comprehensive simulation study focused on a specific type of MOSFET called the triple material gate all around (GAA) MOSFET. The study incorporates an inner gate engineering approach, utilizing a high-K dielectric insulator to facilitate the downsizing of the device. Our investigation primarily compares the performance of the triple material gate GAA MOSFET with a similar MOSFET design incorporating triple material inner gate engineering. We evaluate a range of parameters, including drain current (ID), threshold voltage (Vth), transconductance (gm), higher-order transconductance (gm2, gm3, gm4), transconductance generation factor (TGF), second-order voltage coefficient (VIP2), and third-order voltage coefficient (VIP3). The findings of our study highlight the linearity analysis of the proposed device, particularly in the context of lower technology nodes. Based on our results, we posit that the triple material gate GAA MOSFET with inner gate engineering holds substantial promise as a potential candidate for future semiconductor applications. technologies.

关键词： Diamond   Solid-solution reaction   Surface planarization   MOSFET fabrication  

摘要： New fabrication processes for buried p+-type diamond using etching techniques based on the solid-solution reaction of carbon with nickel were proposed and demonstrated. Specifically, an inversion-channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with source and drain regions buried in the body were fabricated, and their operation were confirmed. An etching process using etching techniques based on the solid-solution reaction of carbon with nickel was applied to realize trench formation and planarization after the growth of a p+-type diamond. The fabricated MOSFET exhibited drain current density equivalent to that of conventional MOSFET with source and drain p+-type regions deposited as islands on an n-type body, and ideal field-effect transistor characteristics with linear and saturation regions, and the drain current density was controlled by the gate voltage. However, the surface protrusion structure owing to the incomplete planarization process limited the device characteristics. The proposed fabrication processes for buried layers are expected to function as an important selective doping technique for diamond electronic devices such as ion implantation.

关键词： Negative capacitance   Gate-stacking   Propagation delay   Linearity   Short channel effects   VTC curves   NEGATIVE CAPACITANCE   MOSFET   FET  

摘要： This work investigates a Gate-Stacked negative capacitance field-effect transistor with a high dielectric material layer in the substrate region (GS-NCFET). Also, the effect of different types of spacers is taken into account. Spacers are differentiated based on their dielectric constant, i.e., GS-NCFET with no spacer is denoted as S0, with air spacer is denoted as S1, with SiO2 specified as S2, and with HfO2 noted as S3 device architecture. Self-consistent LCAO-based DFT analysis is done for the spacer materials in terms of band structure, PDOS, and Hartree potential. Further, the switching ratio (Ion/Ioff) is discussed for S0, S1, S2, and S3. Further, the short channel effects (SCEs) like subthreshold swing (SS) and drain-induced barrier lowering (DIBL) are extracted at drain-source voltage (Vds) of 0.5 V. In addition, the voltage transfer characteristic (VTC) curve of GS-NCFET with a spacer-based inverter is considered for digital application purposes, and the transition region is drawn out for all the device architecture-based inverters. Essential parameters like propagation time delay and rise/fall time are evaluated to study the application purposes. In GS-NCFET, a dielectric layer as a buried oxide (BOX) is inserted in the substrate region to reduce the leakage current.

关键词： LDMOS   High k   Variable lateral doping technique   Short-circuit capacity   Breakdown voltage   4H-SIC MESFET   PERFORMANCE   IMPROVEMENT   TEMPERATURE   MOBILITY   DESIGN  

摘要： In this article, a novel high - k and equivalent variable lateral doping 4H-SiC lateral double -diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed and calibrated by numerical simulation. The three-dimensional equivalently P -top region is employed in the drift region, and only one additional ion implantation step is needed to achieve variable lateral doping (VLD) technique. The VLD technique combined with the high - k dielectric in the drift region, not only increases the doping concentration of N -drift region, but also optimizes the electric field distribution in the drift region. Simulation results indicates that the BV , specific on -resistance and the short-circuit withstand time of the proposed H k VLD LDMOS are improved by 48.91%, 53.6% and 60.2% respectively, compared with those of the conventional LDMOS device.

关键词： Meminductor Emulator   MOSFET-C   Non-volatility   Pinched Hysteresis Loop   Chaotic Oscillator   MEMRISTOR   ELEMENTS  

摘要： This article presents a grounded meminductor emulator architecture based on only MOSFETs and two capacitors. Proposed models do not use any extra components like a resistor, multiplier, or buffer. The simulation and verification of the proposed emulator are performed using Cadence Virtuoso with a 180 nm CMOS process parameter. The offered emulator requires +/- 0.9 V DC power supply and its static power consumption is 0.421 mW. The maximum operating frequency of the meminductor is 32 MHz. The usefulness and reliability of the offered design are tested by performing various types of simulation including Monte Carlo and temperature variation. The chaotic oscillator is designed that demonstrate the viability of the suggested meminductor emulator.

关键词： THIN-FILM-TRANSISTOR   INDIUM-ZINC-OXIDE   COMBUSTION  

摘要： Of late, there has been a tremendous surge in the development of field-effect transistors of various kinds because of their versatile nature of applications in the frontier fields of science and technology. Among them, metal oxide semiconducting field-effect transistors (MOSFET) offer cutting-edge technology in a cost-efficient way of fabricating the device, which focuses on enlarged active area and high area efficiency that could be achieved using simple fabrication processes. The top contact-bottom gate approach has been chosen for the fabrication of an Indium Zinc Oxide MOSFET utilizing silver (Ag) as the source and drain materials. High k-dielectric layer Al2O3 has been deposited onto the n-type phosphorus-doped silicon substrate, which functions as a gate layer. The fabrication process is entailed with the solution processing technique along with the spin coating process. Electrical characterization on the IZO MOSFET shows promising results in the field-effect mobility of 21.37 cm2 V-1 S-1, a subthreshold slope of 0.181 V/decade, and a threshold voltage of 1.2608 V, respectively. The electrical characterization was considered under different atmospheres like dark and daylight showcasing the photoresponsivity which leads to the possible potential for optoelectronic devices. Transport properties of the fabricated IZO MOSFET have been determined by Hall measurements which indicate an electron density of 0.343 x 1023 cm-3 as well as an electron mobility of 2.305 x 10-4 cm2 eV-1 S-1. The structural analyses have been investigated using X-ray diffraction and X-ray photoelectron spectroscopic techniques which could confirm the composition and the film quality of the fabricated materials on the substrate. Surface morphology and structural characterization of the thin film have been studied using SEM and AFM studies. Major applications of IZO MOSFET include power electronics such as power supplies, inverters, and motor control systems.

关键词： Memristor emulator   PGME-3/NGME-3   Mateiral implication   GHz-level  

摘要： PGME-3/NGME-3 only consists of three MOSFETs and can be operated at 5 GHz. The minimum step time of the material implication circuit based on PGME-3 and NGME-3 is 70 ps. However, the negative/positive lobe of PGME-3/NMGE-3's ii-vi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$i_i-v_i$$\end{document} curve expands as the frequency of input vi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$v_i$$\end{document} increases. The tails of the PGME-3's negative lobe and NMGE-3's positive lobe get longer as the amplitude of vi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$v_i$$\end{document} gets bigger. This paper proposes a GHz-level memristor emulator consisting of one MOSFET and two diodes, i.e., PGME-1M2D and NGME-1M2D. The operating frequency of the proposed memristor emulator is high up to 10 GHz. The minimum step time of the material implication circuit based on PGME-1M2D and NGME-1M2D is 85 ps. The long tails of PGME-1M2D/NGME-1M2D's ii-vi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$i_i-v_i$$\end{document} curves do not appear when the amplitude of vi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemarg

关键词： FIELD-EFFECT TRANSISTOR   PERFORMANCE  

摘要： This paper presents a novel biosensor, the graded channel gate-all-around (GC-GAA) silicon nanowire-FET biosensor, which utilizes dielectric modulation through a cavity carved from the drain side for label-free biomolecule detection. The biomolecules that become fixed in the cavity region alter the device's electrical properties, such as impedance, resistance, capacitance, and charge field effect, resulting in changes in the biosensing device's threshold voltage, drain current, and sub-threshold slope. The cavity length varies between 10 and 14 nm, and different dielectric constants are used. The study investigates the effect of various biomolecules on the device's performance, including drain current (for dielectric constant = 1 and3.57), sub-threshold slope, threshold voltage, switching ratio, energy band, transconductance, and electric field. The obtained drain currents for device-1 are 2.96 mu A and 2.75 mu A with threshold voltage of 0.78 V and 0.76 V for S_D/D_S graded channel respectively for copper as gate metal. Similarly the drain currents for device-2 are 0.97 mu A and 1.13 mu A with threshold voltage of 0.73 V and 0.68 V for S_D/D_S graded channel respectively. However, for device-3 the drain currents are 0.91 mu A and 1.08 mu A with threshold voltage of 0.73 V and 0.67 V. The results indicate that higher dielectric constants result in higher drain current levels and increased device sensitivity. The GC-GAA-NWFET biosensor demonstrated high sensitivity (similar to 138 mV) and low leakage current, making it a promising candidate for biosensing applications.

关键词： Reconfigurable   Biosensors   Schottky barrier   Sensitivity   MOSFET  

摘要： This study investigates the sensitivity of Underlap Gate Cavity-based Reconfigurable Silicon Nanowire Schottky Barrier Transistor (UCG-RSiNW SBT) with an underlap gate-drain region for biosensing application. The featured unique reconfigurable capability enables the device to operate as either p-type or n-type, dependent on the applied bias polarity. The proposed biosensor incorporates a cavity beneath the control gate on the source side, facilitating the placement of both neutral and charged biomolecules with varying dielectric constant (K) values. Upon injection of biomolecules into the cavity, the device changes electrostatic characteristics, including modulation in threshold voltage, potential, electric field, and sub-threshold swing, ION\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$I_{ON}$$\end{document}, ION\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$I_{ON}$$\end{document}/IOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ I_{OFF}$$\end{document} ratio. The threshold voltage (VTH\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V_{TH}$$\end{document}) Sensitivity of n-mode is enhanced by 97.91%\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{ma

关键词： 变压器   故障诊断   麻雀搜索算法   双向长短期记忆网络   诊断精度  

摘要： 针对变压器故障诊断存在诊断精度不高和麻雀搜索算法(sparrow search algorithm,SSA)存在易陷入局部最优的问题，提出了一种基于融合正余弦和柯西变异的麻雀搜索算法(sine-cosine and Cauchy mutation sparrow search algorithm,SCSSA)优化双向长短期记忆网络(bi-directional long-short term memory,BiLSTM)的变压器故障诊断模型。首先，基于油中溶解气体分析(dissolved gas analysis,DGA)法，以五种特征量作为输入，其次利用正余弦策略和柯西变异策略对麻雀算法进行改进，然后将SCSSA算法、SSA算法和灰狼优化算法(grey wolf optimizer,GWO)在4种测试函数上进行性能对比，验证了SCSSA算法的优越性。最后利用SCSSA算法对BiLSTM网络中的参数进行优化，从而提高BiLSTM网络在变压器故障诊断中的性能。实验结果表明，所提SCSSA-BiLSTM故障诊断模型的综合诊断精度为95.1%，相比于SSA-BiLSTM、GWO-BiLSTM、BiLSTM和LSTM模型分别提高了7.3%、12.2%、14.6%、19.5%，并且SCSSA-BiLSTM模型有着更好的鲁棒性。