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关键词： 变压器   天然酯绝缘油   相容性测试   丁腈橡胶   丙烯酸酯橡胶  

摘要： 本文作者对常规丁腈橡胶和丙烯酸酯橡胶分别在天然酯和矿物油中进行了材料相容性测试,对比分析了这两种变压器常用密封橡胶材料在不同绝缘油中的相容性试验结果,并结合实际工程应用经验,探讨了相容性试验的结果评判指标和建议。

关键词： 轻量化Transformer模型   风电功率   激活函数  

摘要： 风电功率预测对电力调度和新能源管理极为重要。为准确高效预测多变量风电功率,提出一种基于轻量化Transformer(Light Transformer)的风电功率预测方法。首先,采用滚动序列建模方法,确定输入数据,然后采用Transformer预测模型,改进和精简原始结构,在前馈网络模块中使用GeLU激活函数来代替传统的ReLU激活函数,提升模型的质量,轻量化网络结构,利用多头注意力机制,加快模型训练速度,提升预测模型精度。

关键词： 预防为主   健康养殖   水产养殖   孢子虫   南美白对虾   厄尔尼诺   养殖对虾   中草药  

摘要： 今年上半年,广东受到厄尔尼诺的影响,最长持续降雨1个月。这对水产养殖十分不利,特别是外塘养殖南美白对虾,雨水多发导致弧菌、孢子虫等病害频发,养殖户不胜其烦。据了解,今年华南地区外塘养殖南美白对虾成功率仅2~3成,加之今年虾价低迷,不少外塘养殖户都失去信心。外塘养殖接下来的希望在哪?如何做才能提高外塘养殖的成功率呢?吴汉灵在南沙养殖对虾20多年了,一直崇尚健康养殖的理念,当外塘养殖弧菌、孢子虫等病害频发之时,他用“预防为主,健康养殖”的理念,将虾养得又大又靓。

关键词： 换流变压器   分接开关   故障分析   控制同步   运维措施  

摘要： 通过一起实际案例,分析了换流变压器分接开关档位故障的原因。阐述了档位故障时档位的机械指示与上送的档位信号间的差异及其原因。通过检查分接开关相关设备确定了故障原因。进一步,分析了换流变压器分接开关自动控制同步原理,从而解释了故障过程中分接开关发生误动作的原因。此外,还提出了换流变压器分接开关运维措施。

关键词： Polycrystalline Si   Nanosheet   Grain boundary   CMOS inverter   3-sigma level   MOSFET  

摘要： Herein, the advantages of sheet stacking in polycrystalline Si (Poly-Si)-based nanosheet MOSFETs and CMOS inverters were statistically analyzed through technology computer-aided design simulations. Poly-Si is used as the channel material to make the high-density three-dimensional structure in a simple process. We studied the transfer characteristics of single-layer nanosheet (SN) MOSFETs and 3-layer multi-bridge nanosheet (MN) MOSFETs depending on the location and the number of grain boundaries (GBs). Further, the DC/switching performance of SN CMOS and MN CMOS inverters was analyzed based on the location and number of GBs. The multilayer stacked structure not only increased the average on state current and switching speed but also reduced the dispersion of characteristics and performance. In addition, multilayer stacked structure increased the yield based on the 3 sigma-level. Therefore, the stacked MN structure is suitable for implementation in MOSFETs and CMOS inverters with high performance and reliability against fluctuations caused by poly-Si GBs.

关键词： SiC MOSFET   FEM   Al melting   Temperature-dependent   High temperatures   Gate damage   Short-circuit  

摘要： Understanding the electrothermal behavior of SiC MOSFET power devices under extreme operation conditions, such as short circuits, is crucial for their application certification. However, simulating short circuits in electronic components is challenging due to the necessity of a comprehensive thermal and electrical Multiphysics model that incorporates material laws and respects elevated temperatures with broad ranges. It is also needed to model the melting of the topside Al electrode. The paper presents for the first time a 2D electrothermal FEM that simulates the thermodynamic behavior of SiC MOSFET at high temperatures transistors under short-circuit conditions, including wide-range temperature-dependent material property laws. This work models the Al phase transition by considering the apparent heat capacity method and including the latent heat absorbed during the Al solid-liquid phase change (PC). The geometric accuracy of this study provides significant added values compared to existing 1D models. It was deduced that including the temperature-dependent material laws highly impacted the results. The rise in SiC junction temperature led to a delay in the onset of Al melting. It also impacted the progression manner of the Al melting process after the formation of new melting fronts.

关键词： Meminductor   Memristor   Emulator   Chaotic oscillator   Pinched hysteresis loop   Chua's circuit   MEMRISTOR-LESS   MEMCAPACITORS   CIRCUITS   SYSTEM  

摘要： In this paper, a grounded meminductor emulator has been proposed using six MOSFETs (3NMOS and 3PMOS) only. Three transconductance stages and two capacitors are generally required to realize a meminductor emulator. Meminductor is considered as an inductor having memory. In the proposed design of meminductor emulator, the gyrator circuit is realized using common-source and common-gate amplifiers with one capacitor. The first capacitor is used to obtain the behaviour of inductance while the second capacitor is used for charge storage which acts as a memory element. In the proposed design of meminductor emulator, the gate-to-source capacitor of MOSFET is utilized in place of external capacitor for memory element. Therefore, the proposed design is free from the requirement of passive components as the required capacitor is formed by MOSFET. Also, the frequency characteristics of proposed meminductor are found to be satisfactory up to 100 MHz. The other essential characteristics such as non-volatility test, temperature analysis, tunability, Monte Carlo, and corner analysis are also found to be satisfactory. The proposed design of meminductor emulator is compared with other existing meminductor emulators. The performance of the emulator is successfully verified through the realization of chaotic oscillator circuit.

关键词： Triple metal gate engineering   Junctionless   Si nanowire MOSFET biomolecule sensor   DD   ID   SS   DIBL   COMPACT EXPLICIT MODEL   PART I   PERFORMANCE   STACK   DIELECTRICS   TRANSISTOR   IMPACT   SPACER   FET  

摘要： In the present work Dielectric Modulation (DM) technique along with Triple Metal (TM) gate engineering has been used for the junctionless (JL) cylindrical gate all around (CGAA) Si nanowire (NW) MOSFET based biosensor for label free electrical detection of neutral biomolecules species like Uricase, Streptavidin, Protein, Biotin, ChOx (choline oxidase), and APTES etc. For this device, the Drift Diffusion approach has been used along with self -consistent solution of Schrodinger's equation with Poisson's equation. For the biomolecule immobilization, a nanogap cavity region is formed in the JL SiNW MOSFET by etching gate oxide layer above the SiO 2 interfacial layer. The change in the drain current ( I D ), threshold voltage ( V th ), off -current sensitivity ( S Ioff ), threshold voltage sensitivity ( S Vth ) and I on / I off current ratio of the device have been considered as the sensing parameters for detection of biomolecules under dry environment condition. In present work a new sensing metric of sensing of biomolecules - DIBL has been added which has never been reported in literature. In this work for JL SiNW, sensitivity metrics like smaller DIBL -50.47 mV/V, higher S Ioff 9 .33 x 10 5 , higher S Vth 28 .72, nearly ideal subthreshold slope (SS) -60 mV/dec, and higher I on / I off current ratio -9.01 x 10 12 have been obtained in comparison to available literature results.

关键词： Oxide semiconductors  

摘要： This article introduces a comparative study of the losses in Voltage Source Inverter (VSI) based on Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) depending on whether or not the latter are associated with antiparallel diodes. These diodes are optional because MOSFETs have an intrinsic diode capable of conducting reverse currents when their channel is in OFF state. However, it induces additional reverse recovery losses and damaging voltage overshoots. This undesired circumstance occurs during the mandatory switching cell dead-time and is accurately modelled and assessed in this study. Conversely, Schottky diodes feature almost zero reverse recovery losses. Hence, combining each MOSFET with an antiparallel Schottky diode may reduce the converter overall losses. To assess this strategy, an analytical model of the charge stored within the body diode is developed and then compared to experiments using the Double Pulse Test (DPT). It reveals accurate and well suited because it requires only two constant macro parameters which permits to forecast the reverse recovery losses over a wide range of operating conditions, namely switched current, current slope and dead time duration. The selected model is applied in the case where a Schottky diode is placed antiparallel to the MOSFET. It then appears clearly that the interest of such a combination depends on the static characteristics of both the MOSFET and the Schottky diode. This output is a noteworthy point for power electronics designers. Finally, the developed model is applied in the standard use case of the Voltage Source Inverter (VSI). The results reveal the advantage of the suggested model in this use case because the current evolves significantly over time. The outcome of this VSI analysis shows that a significant recovery losses decrease is achieved with good sizing fit between the MOSFET transistor and the additional Schottky diode. © 2024 The Author(s)

关键词： Gate dielectrics   Leakage current   MOSFET   Thin film transistor   Nitric oxide   Deuterium   PECVD   THIN-FILM TRANSISTORS   TECHNOLOGY  

摘要： Gate oxide in metal oxide semiconductor field effect transistor (MOSFET) or gate dielectric layer in thin film transistor (TFT) plays an important role in the inhibition of leakage current. Thus, high-quality of insulating properties (> 10 MV/cm) and high resistance of gate dielectric have been required. The dimension of gate oxide needs to be reduced for the amplified on-current and switching speed. However, the dimension of the oxide, developed so far, has reached its limit, and leakage current is inevitable. The structural, processing, and material methods were categorically discussed to improve insulating properties in TFT and MOSFET for leakage reduction. The parameters including threshold voltage, subthreshold swing (SS), and off current of developed devices were compared in this paper. Through advanced structure application such as GAA, capacitorless DRAM, and hybrid dielectrics, MOSFETs could be scaled down with minimum leakage current. This review paper has been divided into sections covering structural, material, and process developments that have been researched to date. After briefly explaining each of these aspects, the paper concludes by proposing the application of NO precursor as a novel reactant material, deuterium-passivation, and process parameter optimization to address the current reduction for further research.